t4 - lds -0 186 , rev . 2 (1 21 219 ) ?201 2 microsemi corporation page 1 of 7 2n2904(a) and 2n2905(a) available on commercial versions pn p switching silicon transistor qualified per mil - prf - 19500/ 290 qualified levels : jan, jantx , jantxv and jans description this family of 2n29 04 and 2n2905 a switching transistors are military qualified up to the jans level for high - reliability applications . these devices are also available in a to -5 package . microsemi also offers numerous other transistor products to meet higher and lower powe r ratings with various switching speed requirements in both through - hole and surface - mount packages. to - 39 (to - 205ad) package also available in : to - 5 package ( long - leaded) 2n2904 a l & 2n2905 al important: for the latest information, visit our websit e http://www.microsemi.com . features ? jedec registered 2n 2904 through 2n 2905 a series. ? jan, jantx, jantxv, and jans qualifications are available per mil - prf - 19500/290. (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applications / benefits ? general purpose transistors for high speed switching applications. ? military and other high - reliability applications. max imum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditio ns symbol value unit 2n2904 2n2905 2n2904a 2n2905a collector - emitter voltage v ceo 40 60 v collector - base voltage v cbo 60 v emitter - base voltage v ebo 5.0 v thermal resistance junction - to - ambient r ? ja 195 o c/w thermal resistance junction - to - case r ? jc 50 o c/w collector current i c 600 ma total power dissipation @ t a = +25 c (1) @ t c = + 25 c (2) p t 0.8 3 .0 w operating & storage junction temperature range t j & t stg - 65 to +200 c notes : 1. fo r derating, see figures 1 and 2 . 2. for thermal impedance, see figures 3 and 4 . downloaded from: http:///
t4 - lds -0 186 , rev . 2 (1 21 219 ) ?201 2 microsemi corporation page 2 of 7 2n2904(a) and 2n2905(a) mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? terminals: leads are k ov ar, n ickel plated, and finish is solder dip (sn63/pb37). can be rohs compliant with pure matte - tin (commercial grade only) . ? marking: part number, d ate c ode, m anufacturers id. ? polarity: pnp (see package outline). ? weight: a pproximately 1.064 grams. ? see p ackage d imensions on last page. part nomenclature jan 2n2904 a (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = c ommercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant e lectrical parameter modifier symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circuit between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector open . downloaded from: http:///
t4 - lds -0 186 , rev . 2 (1 21 219 ) ?201 2 microsemi corporation page 3 of 7 2n2904(a) and 2n2905(a) electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions s ymbol min. max. unit off character istics collector - emitter breakdown current v (br)ceo v i c = 10 ma 2n2904, 2n2905 2n2904a, 2n2905a 40 60 collector - emitter cutoff voltage v ce = 40 v v ce = 60 v 2n2904, 2n2905 2n2904a, 2n2905a i ces 1.0 a collector - base cutoff current v cb = 60 v all types i cbo1 10 a v cb = 50 v 2n2904, 2n2905 2n2904a, 2n2905a i cbo2 20 10 na na v cb = 50 v @ t a = +150 oc 2n2904, 2n2905 2n2904a, 2n2905a i cbo3 20 10 a a emitter - base cutoff current v eb = 3.5 v v eb = 5.0 v i ebo 50 10 na a on character is tics (1) forward - current transfer ratio h fe i c = 0.1 ma, v ce = 10 v 2n2904 2n2905 2n2904a 2n2905a 20 35 40 75 i c = 1.0 ma, v ce = 10 v 2n2904 2n2905 2n2904a 2n2905a 25 50 40 100 175 450 175 4 50 i c = 10 ma , v ce = 10 v 2n2904 2n2905 2n2904a 2n2905a 35 75 40 100 i c = 150 ma, v ce = 10 v 2n2904, 2n2904a 2n2905, 2n2905a 40 100 120 300 i c = 500 ma, v ce = 10 v 2n2904 2n2905 2n2904a 2n2905a 20 30 40 50 downloaded from: http:///
t4 - lds -0 186 , rev . 2 (1 21 219 ) ?201 2 microsemi corporation page 4 of 7 2n2904(a) and 2n2905(a) electrical ch aracteristics @ t a = +25 c, unless otherwise noted (continued) parameters / test conditions s ymbol min. max. unit on character is tics (1) (continued) collector - emitter saturation volta ge v ce(sat) v i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.4 1.6 base - emitter saturation voltage v be(sat) v i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 1.3 2.6 (1) pulse test: pulse width = 300 s, duty cycle 2.0%. dynamic characteristics parameters / test conditions symbol min. max. unit small - signal short - circuit forward - current transfer ratio i c = 1.0 ma, v ce = 10 v, f = 1.0 khz 2n2904 2n2905 2n2904a, 2n2905a h fe 25 50 40 small - signal short - circuit forward - current transfer ratio |h fe | 2.0 i c = 50 ma, v ce = 20 v, f = 100 mhz output capacitance c obo pf v cb = 10 v, i e = 0, 100 khz f 1.0mhz 8.0 iutput capacitance c ibo pf v eb = 2.0 v, i c = 0, 100 khz f 1.0mhz 30 switching characteristics parameters / test conditions symbol min. max. unit turn - on time t on 45 ns turn - off time t off 300 ns downloaded from: http:///
t4 - lds -0 186 , rev . 2 (1 21 219 ) ?201 2 microsemi corporation page 5 of 7 2n2904(a) and 2n2905(a) graphs t a ( c) (ambient) figu re 1 derating (r ja ) pcb tc ( o c) (case) figure 2 derating (r ja ) pcb dc operation maximum rating (w) dc operation maximum rating (w) downloaded from: http:///
t4 - lds -0 186 , rev . 2 (1 21 219 ) ?201 2 microsemi corporation page 6 of 7 2n2904(a) and 2n2905(a) graphs (continued) time (s) figure 3 thermal impedance graph (r ja ) time (s) figure 4 thermal impedance graph (r ja ) theta ( o c/w) theta ( o c /w) downloaded from: http:///
t4 - lds -0 186 , rev . 2 (1 21 219 ) ?201 2 microsemi corporation page 7 of 7 2n2904(a) and 2n2905(a) packa ge dimensions notes: 1. dimension s are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, t w shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) rel ative to tab at mmc. 7. dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11 . i n accordance with asme y14.5m, diameters are equivalent to x symbology. 12. for l suffix devices, dimension ll is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm ) maximum. 13 . lead 1 = emitter, lead 2 = base, lead 3 = collector. dimensions symbol inch millimeters note min max min max cd 0.305 0.335 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7, 8 ll 0.500 0.750 12.70 19.05 7, 8, 12 lu 0.016 0.019 0.41 0.48 7, 8 l1 0.050 1.27 7, 8 l2 0.250 6.35 7, 8 p 0.100 2.54 q 0.050 1.27 5 tl 0.029 0.045 0.74 1.14 4 tw 0.028 0.034 0.71 0.86 3 r 0.010 0.25 10 45 tp 45 tp 6 downloaded from: http:///
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